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IXFT320N10T2

IXFT320N10T2 IXYS


media-3321957.pdf Hersteller: IXYS
MOSFETs Trench T2 HiperFET Power MOSFET
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Technische Details IXFT320N10T2 IXYS

Description: MOSFET N-CH 100V 320A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 320A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V, Power Dissipation (Max): 1000W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V.

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IXFT320N10T2 IXFT320N10T2 Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 100V 320A 3-Pin(2+Tab) TO-268
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IXFT320N10T2 IXFT320N10T2 Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 100V 320A 3-Pin(2+Tab) TO-268
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IXFT320N10T2 IXFT320N10T2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC669820&compId=IXFT320N10T2.pdf?ci_sign=01df806445c3914f7627f006ec4695a8a5f161d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
Features of semiconductor devices: thrench gate power mosfet
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IXFT320N10T2 IXFT320N10T2 Hersteller : IXYS littelfuse-discrete-mosfets-ixf-320n10t2-datasheet?assetguid=99cd63b2-fc21-4394-81cf-ea2bb2be118d Description: MOSFET N-CH 100V 320A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
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IXFT320N10T2 IXFT320N10T2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC669820&compId=IXFT320N10T2.pdf?ci_sign=01df806445c3914f7627f006ec4695a8a5f161d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
Features of semiconductor devices: thrench gate power mosfet
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