auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 33.83 EUR |
| 10+ | 33.81 EUR |
| 30+ | 25.84 EUR |
| 120+ | 25.36 EUR |
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Technische Details IXFT320N10T2 IXYS
Description: MOSFET N-CH 100V 320A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 320A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V, Power Dissipation (Max): 1000W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V.
Weitere Produktangebote IXFT320N10T2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXFT320N10T2 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 100V 320A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXFT320N10T2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 320A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXFT320N10T2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 320A Power dissipation: 1kW Case: TO268 On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 430nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 98ns Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFT320N10T2 | Hersteller : IXYS |
Description: MOSFET N-CH 100V 320A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V Power Dissipation (Max): 1000W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFT320N10T2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 320A Power dissipation: 1kW Case: TO268 On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 430nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 98ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |