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IXFT36N50P IXYS


Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_36N50P_Datasheet.PDF
Hersteller: IXYS
MOSFETs 500V 36A
auf Bestellung 1508 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+27.31 EUR
10+16.67 EUR
120+15.14 EUR
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Technische Details IXFT36N50P IXYS

Description: MOSFET N-CH 500V 36A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V.

Weitere Produktangebote IXFT36N50P nach Preis ab 13.28 EUR bis 27.77 EUR

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IXFT36N50P IXFT36N50P IXYS DS99364FIXFHFTFV36N50PS.pdf Description: MOSFET N-CH 500V 36A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
auf Bestellung 636 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.77 EUR
30+16.93 EUR
60+15.64 EUR
120+14.55 EUR
510+13.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFT36N50P DS99364FIXFHFTFV36N50PS.pdf
Hersteller: IXYS
Description: MOSFET N-CH 500V 36A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
auf Bestellung 636 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+27.77 EUR
30+16.93 EUR
60+15.64 EUR
120+14.55 EUR
510+13.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH