IXFT50N60X IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Features of semiconductor devices: ultra junction x-class
| Anzahl | Privatkunde |
|---|---|
| 5+ | 18.12 EUR |
| 6+ | 16.31 EUR |
| 10+ | 14.38 EUR |
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Technische Details IXFT50N60X IXYS
Description: MOSFET N-CH 600V 50A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 73mOhm @ 25A, 10V, Power Dissipation (Max): 660W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-268, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V.
Weitere Produktangebote IXFT50N60X nach Preis ab 23.37 EUR bis 27.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
| IXFT50N60X | Ixys Corporation | IXFT50N60X |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXFT50N60X |
Hersteller: Ixys Corporation
IXFT50N60X
IXFT50N60X
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 27.32 EUR |
| 10+ | 23.37 EUR |