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Technische Details IXFT50N85XHV IXYS
Description: MOSFET N-CH 850V 50A TO268, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Drain to Source Voltage (Vdss): 850 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-268HV (IXFT), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Power Dissipation (Max): 890W (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc).
Weitere Produktangebote IXFT50N85XHV nach Preis ab 16.78 EUR bis 29.85 EUR
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IXFT50N85XHV | Hersteller : IXYS |
 Description: MOSFET N-CH 850V 50A TO268FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Drain to Source Voltage (Vdss): 850 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-268HV (IXFT) Vgs(th) (Max) @ Id: 5.5V @ 4mA Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
auf Bestellung 632 Stücke: Lieferzeit 10-14 Tag (e) |
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