auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.23 EUR |
| 10+ | 21.05 EUR |
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Technische Details IXFT50N85XHV IXYS
Description: MOSFET N-CH 850V 50A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V.
Weitere Produktangebote IXFT50N85XHV nach Preis ab 16.66 EUR bis 29.66 EUR
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IXFT50N85XHV | Hersteller : IXYS |
 Description: MOSFET N-CH 850V 50A TO268Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V |
auf Bestellung 664 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT50N85XHV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns Mounting: SMD Case: TO268HV On-state resistance: 0.105Ω Drain current: 50A Power dissipation: 890W Drain-source voltage: 850V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: ultra junction x-class Polarisation: unipolar Gate charge: 152nC Reverse recovery time: 218ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFT50N85XHV | Hersteller : Littelfuse |
Trans MOSFET N-CH 850V 50A 3-Pin(2+Tab) D3PAK |
Produkt ist nicht verfügbar |
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IXFT50N85XHV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns Mounting: SMD Case: TO268HV On-state resistance: 0.105Ω Drain current: 50A Power dissipation: 890W Drain-source voltage: 850V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: ultra junction x-class Polarisation: unipolar Gate charge: 152nC Reverse recovery time: 218ns |
Produkt ist nicht verfügbar |