Produkte > IXYS > IXFT52N30Q
IXFT52N30Q

IXFT52N30Q IXYS

littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh52n30q_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 300V 52A TO268
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IXFT52N30Q IXYS

Description: MOSFET N-CH 300V 52A TO268, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 4V @ 4mA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Packaging: Tube.