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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.3 EUR |
| 10+ | 11.23 EUR |
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Technische Details IXFT60N50P3 IXYS
Description: MOSFET N-CH 500V 60A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V.
Weitere Produktangebote IXFT60N50P3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFT60N50P3 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 500V 60A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXFT60N50P3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 60A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXFT60N50P3 | Hersteller : IXYS |
Description: MOSFET N-CH 500V 60A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFT60N50P3 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 1.04kW Case: TO268 On-state resistance: 0.11Ω Mounting: SMD Gate charge: 96nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |