IXFT6N100F IXYS
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Technische Details IXFT6N100F IXYS
Description: MOSFET N-CH 1000V 6A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 2.5mA, Supplier Device Package: TO-268, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V.
Weitere Produktangebote IXFT6N100F
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFT6N100F | Hersteller : Ixys Corporation |
 Trans MOSFET N-CH 1KV 6A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXFT6N100F | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 6A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-268 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V |
Produkt ist nicht verfügbar |