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IXFT6N100F IXYS


DS98732A(IXFH-FT6N100F)-1110262.pdf Hersteller: IXYS
MOSFET IXFT6N100F 1000V 6A HIPERFET F-Class HiPerRF Capable MOSFETs
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Technische Details IXFT6N100F IXYS

Description: MOSFET N-CH 1000V 6A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 2.5mA, Supplier Device Package: TO-268, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V.

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IXFT6N100F IXFT6N100F Hersteller : Ixys Corporation ixfh6n100f_datasheet_reva.pdf.pdf Trans MOSFET N-CH 1KV 6A 3-Pin(2+Tab) TO-268
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IXFT6N100F IXFT6N100F Hersteller : IXYS Description: MOSFET N-CH 1000V 6A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH