IXFT70N30Q3 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 300V 70A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 35A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4735 pF @ 25 V
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Technische Details IXFT70N30Q3 IXYS
Description: MOSFET N-CH 300V 70A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 35A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 4mA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4735 pF @ 25 V.
Weitere Produktangebote IXFT70N30Q3
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IXFT70N30Q3 | Hersteller : IXYS |
MOSFETs Q3Class HiPerFET Pwr MOSFET 300V/70A |
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IXFT70N30Q3 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268 Case: TO268 Mounting: SMD Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 98nC On-state resistance: 54mΩ Drain current: 70A Drain-source voltage: 300V Power dissipation: 830W Kind of channel: enhancement |
Produkt ist nicht verfügbar |