IXFT70N30Q3 IXYS
Hersteller: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 830W
Case: TO268
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details IXFT70N30Q3 IXYS
Description: MOSFET N-CH 300V 70A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 35A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 4mA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4735 pF @ 25 V.
Weitere Produktangebote IXFT70N30Q3
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IXFT70N30Q3 | Hersteller : IXYS |
Description: MOSFET N-CH 300V 70A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 35A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 4mA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4735 pF @ 25 V |
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IXFT70N30Q3 | Hersteller : IXYS |
MOSFET Q3Class HiPerFET Pwr MOSFET 300V/70A |
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IXFT70N30Q3 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 70A Power dissipation: 830W Case: TO268 On-state resistance: 54mΩ Mounting: SMD Gate charge: 98nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |