Weitere Produktangebote IXFT80N65X2HV nach Preis ab 15.69 EUR bis 30.2 EUR
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IXFT80N65X2HV | Hersteller : IXYS |
 MOSFETs 650V/80A TO-268HV |
auf Bestellung 215 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT80N65X2HV | Hersteller : IXYS |
Description: MOSFET N-CH 650V 80A TO268HV Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V |
auf Bestellung 1037 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT80N65X2HV | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 80A 3-Pin(2+Tab) D3PAK-HV |
Produkt ist nicht verfügbar |
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IXFT80N65X2HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268 Technology: HiPerFET™; X2-Class Mounting: SMD Case: TO268 Kind of package: tube Reverse recovery time: 200ns On-state resistance: 38mΩ Drain current: 80A Gate-source voltage: ±30V Power dissipation: 890W Drain-source voltage: 650V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 0.14µC |
Produkt ist nicht verfügbar |