auf Bestellung 391 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.24 EUR |
| 10+ | 16.68 EUR |
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Technische Details IXFT80N65X2HV IXYS
Description: MOSFET N-CH 650V 80A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V.
Weitere Produktangebote IXFT80N65X2HV nach Preis ab 13.61 EUR bis 25.26 EUR
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IXFT80N65X2HV | Hersteller : IXYS |
 Description: MOSFET N-CH 650V 80A TO268HVPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V |
auf Bestellung 1007 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT80N65X2HV Produktcode: 177859
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Transistoren > MOSFET N-CH |
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IXFT80N65X2HV | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 80A 3-Pin(2+Tab) D3PAK-HV |
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IXFT80N65X2HV | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 80A 3-Pin(2+Tab) D3PAK-HV |
Produkt ist nicht verfügbar |
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IXFT80N65X2HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 80A Power dissipation: 890W Case: TO268 Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |