
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 39.53 EUR |
10+ | 36.31 EUR |
30+ | 34.81 EUR |
120+ | 30.68 EUR |
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Technische Details IXFT94N30T IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO268; 155ns, Mounting: SMD, Kind of package: tube, Power dissipation: 890W, Polarisation: unipolar, Features of semiconductor devices: thrench gate power mosfet, Gate charge: 0.19µC, Kind of channel: enhancement, Case: TO268, Reverse recovery time: 155ns, Drain-source voltage: 300V, Drain current: 94A, On-state resistance: 36mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXFT94N30T
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFT94N30T | Hersteller : IXYS |
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auf Bestellung 3690 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT94N30T | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO268; 155ns Mounting: SMD Kind of package: tube Power dissipation: 890W Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Gate charge: 0.19µC Kind of channel: enhancement Case: TO268 Reverse recovery time: 155ns Drain-source voltage: 300V Drain current: 94A On-state resistance: 36mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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![]() |
IXFT94N30T | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO268; 155ns Mounting: SMD Kind of package: tube Power dissipation: 890W Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Gate charge: 0.19µC Kind of channel: enhancement Case: TO268 Reverse recovery time: 155ns Drain-source voltage: 300V Drain current: 94A On-state resistance: 36mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |