auf Bestellung 300 Stücke:
Lieferzeit 346-350 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 17.67 EUR |
| 10+ | 15.15 EUR |
| 30+ | 13.75 EUR |
| 120+ | 12.62 EUR |
| 270+ | 11.88 EUR |
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Produktbewertung abgeben
Technische Details IXFT96N20P IXYS
Description: MOSFET N-CH 200V 96A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V.
Weitere Produktangebote IXFT96N20P nach Preis ab 10.01 EUR bis 19.40 EUR
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IXFT96N20P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 200V 96A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
auf Bestellung 295 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT96N20P | Hersteller : Littelfuse |
 Trans MOSFET N-CH 200V 96A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXFT96N20P | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 96A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXFT96N20P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 96A Power dissipation: 600W Case: TO268 On-state resistance: 24mΩ Mounting: SMD Gate charge: 145nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFT96N20P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 96A Power dissipation: 600W Case: TO268 On-state resistance: 24mΩ Mounting: SMD Gate charge: 145nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |