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IXFV12N120P

IXFV12N120P IXYS

littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh12n120p_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 1200V 12A PLUS220
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS220
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 543W (Tc)
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Technische Details IXFV12N120P IXYS

Description: MOSFET N-CH 1200V 12A PLUS220, Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Short Tab, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PLUS220, Vgs(th) (Max) @ Id: 6.5V @ 1mA, Power Dissipation (Max): 543W (Tc).