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Technische Details IXFX100N65X2 IXYS
Description: MOSFET N-CH 650V 100A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V.
Weitere Produktangebote IXFX100N65X2 nach Preis ab 16.63 EUR bis 31.7 EUR
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IXFX100N65X2 | Hersteller : IXYS |
 Description: MOSFET N-CH 650V 100A PLUS247-3Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V |
auf Bestellung 1545 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFX100N65X2 | Hersteller : IXYS/Littelfuse |
N-канальний ПТ, Udss, В = 650, Id = 100, Ciss, пФ @ Uds, В = 11300 @ 25, Qg, нКл = 180, Rds = 30 мОм, Ugs(th) = 5,5, Р, Вт = 1040, Тексп, °C = -55...+150, Тип монт. = вивідний,... Група товару: Транзистори Корпус: TO-247-3 Од. вим: шт Anzahl je Verpackung: 30 Stücke |
verfügbar 7 Stücke: |
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IXFX100N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 100A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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| IXFX100N65X2 |
MOSFET N-CH 650V 100A TO-247-3 (PLUS247) Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IXFX100N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Case: PLUS247™ Features of semiconductor devices: ultra junction x-class Kind of package: tube Polarisation: unipolar Gate charge: 183nC Reverse recovery time: 200ns On-state resistance: 30mΩ Drain current: 100A Power dissipation: 1.04kW Drain-source voltage: 650V |
Produkt ist nicht verfügbar |