Technische Details IXFX120N20 Littelfuse
Description: MOSFET N-CH 200V 120A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V, Power Dissipation (Max): 560W (Tc), Vgs(th) (Max) @ Id: 4V @ 8mA, Supplier Device Package: PLUS247™-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V.
Weitere Produktangebote IXFX120N20
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
![]() |
IXFX120N20 | Hersteller : IXYS |
Description: MOSFET N-CH 200V 120A PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V Power Dissipation (Max): 560W (Tc) Vgs(th) (Max) @ Id: 4V @ 8mA Supplier Device Package: PLUS247™-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V |
Produkt ist nicht verfügbar |
|
![]() |
IXFX120N20 | Hersteller : IXYS |
![]() |
Produkt ist nicht verfügbar |