auf Bestellung 264 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 27.05 EUR |
| 10+ | 25.43 EUR |
| 30+ | 18.99 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFX120N30P3 IXYS
Description: MOSFET N-CH 300V 120A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 60A, 10V, Power Dissipation (Max): 1130W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8630 pF @ 25 V.
Weitere Produktangebote IXFX120N30P3 nach Preis ab 16.86 EUR bis 27.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFX120N30P3 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 300V 120A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 60A, 10V Power Dissipation (Max): 1130W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8630 pF @ 25 V |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
IXFX120N30P3 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 300V 120A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
|||||||||
 |
IXFX120N30P3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 120A Power dissipation: 1.13kW Case: PLUS247™ On-state resistance: 27mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||
|
|
IXFX120N30P3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 120A Power dissipation: 1.13kW Case: PLUS247™ On-state resistance: 27mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |