IXFX160N30T IXYS
Hersteller: IXYSDescription: MOSFET N-CH 300V 160A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
auf Bestellung 437 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 30.22 EUR |
| 30+ | 19 EUR |
| 120+ | 17.08 EUR |
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Technische Details IXFX160N30T IXYS
Description: MOSFET N-CH 300V 160A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V, Power Dissipation (Max): 1390W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V.
Weitere Produktangebote IXFX160N30T nach Preis ab 20.68 EUR bis 30.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFX160N30T | Hersteller : IXYS |
MOSFETs 160A 300V |
auf Bestellung 78 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFX160N30T | Hersteller : Littelfuse |
Trans MOSFET N-CH 300V 160A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXFX160N30T | Hersteller : Littelfuse |
Trans MOSFET N-CH 300V 160A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXFX160N30T | Hersteller : Littelfuse |
Trans MOSFET N-CH 300V 160A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXFX160N30T | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 160A Power dissipation: 1390W Case: PLUS247™ On-state resistance: 19mΩ Mounting: THT Gate charge: 376nC Kind of channel: enhancement Kind of package: tube Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |