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IXFX170N20T

IXFX170N20T Littelfuse


_mosfets_n-channel_trench_gate_ixf_170n20t_datasheet.pdf.pdf Hersteller: Littelfuse
Trans MOSFET N-CH 200V 170A Automotive 3-Pin(3+Tab) PLUS 247
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Technische Details IXFX170N20T Littelfuse

Description: MOSFET N-CH 200V 170A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V, Power Dissipation (Max): 1150W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V.

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IXFX170N20T IXFX170N20T Hersteller : Littelfuse rete-mosfets-n-channel-trench-gate-ixf-170n20t-datasheet.pdf Trans MOSFET N-CH 200V 170A 3-Pin(3+Tab) PLUS 247
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IXFX170N20T IXFX170N20T Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5344B49DB7820&compId=IXFK(X)170N20T.pdf?ci_sign=132d408b08d163a2c5614a95cdf3179fcf883841 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; PLUS247™
Mounting: THT
Case: PLUS247™
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.15kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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IXFX170N20T IXFX170N20T Hersteller : Littelfuse Inc. Description: MOSFET N-CH 200V 170A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 1150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V
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IXFX170N20T IXFX170N20T Hersteller : IXYS media-3322597.pdf MOSFETs 170A 200V
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IXFX170N20T IXFX170N20T Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5344B49DB7820&compId=IXFK(X)170N20T.pdf?ci_sign=132d408b08d163a2c5614a95cdf3179fcf883841 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; PLUS247™
Mounting: THT
Case: PLUS247™
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.15kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH