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Technische Details IXFX20N120P IXYS
Description: MOSFET N-CH 1200V 20A PLUS247-3, Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PLUS247™-3, Vgs(th) (Max) @ Id: 6.5V @ 1mA, Power Dissipation (Max): 780W (Tc), Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.
Weitere Produktangebote IXFX20N120P nach Preis ab 30.7 EUR bis 49.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXFX20N120P | IXYS |
 Description: MOSFET N-CH 1200V 20A PLUS247-3Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PLUS247™-3 Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFX20N120P |
|
Hersteller: IXYS
Description: MOSFET N-CH 1200V 20A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Description: MOSFET N-CH 1200V 20A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 49.85 EUR |
| 30+ | 32.23 EUR |
| 120+ | 30.7 EUR |