auf Bestellung 660 Stücke:
Lieferzeit 430-434 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 41.78 EUR |
| 10+ | 41.13 EUR |
| 30+ | 31.03 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFX20N120P IXYS
Description: MOSFET N-CH 1200V 20A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V.
Weitere Produktangebote IXFX20N120P nach Preis ab 25.14 EUR bis 71.50 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFX20N120P | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 780W Case: PLUS247™ On-state resistance: 570mΩ Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±30V Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
|
|
IXFX20N120P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 780W Case: PLUS247™ On-state resistance: 570mΩ Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±30V Reverse recovery time: 300ns |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
IXFX20N120P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.2KV 20A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
|||||||||||
 |
IXFX20N120P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.2KV 20A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
|||||||||||
 |
IXFX20N120P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1200V 20A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V |
Produkt ist nicht verfügbar |