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Technische Details IXFX20N120P IXYS
Description: MOSFET N-CH 1200V 20A PLUS247-3, Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PLUS247™-3, Vgs(th) (Max) @ Id: 6.5V @ 1mA, Power Dissipation (Max): 780W (Tc), Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.
Weitere Produktangebote IXFX20N120P nach Preis ab 25.8 EUR bis 41.89 EUR
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IXFX20N120P | Hersteller : IXYS |
 Description: MOSFET N-CH 1200V 20A PLUS247-3Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PLUS247™-3 Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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