auf Bestellung 244 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 54.05 EUR |
| 10+ | 48.03 EUR |
| 30+ | 44.79 EUR |
| 60+ | 43.40 EUR |
| 120+ | 41.99 EUR |
| 270+ | 39.20 EUR |
| 510+ | 38.74 EUR |
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Technische Details IXFX210N30X3 IXYS
Description: MOSFET N-CH 300V 210A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 210A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V.
Weitere Produktangebote IXFX210N30X3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXFX210N30X3 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXFX210N30X3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXFX210N30X3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXFX210N30X3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 5.5mΩ Mounting: THT Gate charge: 375nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±20V Reverse recovery time: 190ns Technology: HiPerFET™; X3-Class Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFX210N30X3 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 300V 210A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFX210N30X3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 5.5mΩ Mounting: THT Gate charge: 375nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±20V Reverse recovery time: 190ns Technology: HiPerFET™; X3-Class |
Produkt ist nicht verfügbar |