| Anzahl | Privatkunde |
|---|---|
| 1+ | 69.07 EUR |
| 10+ | 52.99 EUR |
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Technische Details IXFX210N30X3 IXYS
Description: LITTELFUSE - IXFX210N30X3 - MOSFET, N-CH, 300V, 210A, PLUS247, Transistormontage: Through Hole, Drain-Source-Spannung Vds: 300, Dauer-Drainstrom Id: 210, Qualifikation: -, Verlustleistung Pd: 1.25, Gate-Source-Schwellenspannung, max.: 4.5, Verlustleistung: 1.25, Bauform - Transistor: PLUS247, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 3, Produktpalette: X3-Class HiPerFET Series, Wandlerpolarität: N Channel, Kanaltyp: N Channel, Betriebswiderstand, Rds(on): 0.0043, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.0043, SVHC: To Be Advised.
Weitere Produktangebote IXFX210N30X3 nach Preis ab 44.79 EUR bis 72.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXFX210N30X3 | IXYS |
 Description: MOSFET N-CH 300V 210A PLUS247-3Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V |
auf Bestellung 889 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFX210N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 375nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 190ns |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFX210N30X3 |
|
Hersteller: IXYS
Description: MOSFET N-CH 300V 210A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
Description: MOSFET N-CH 300V 210A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
auf Bestellung 889 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 72.32 EUR |
| 30+ | 47.95 EUR |
| 60+ | 45.05 EUR |
| 120+ | 44.79 EUR |
| IXFX210N30X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)