| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.93 EUR |
| 10+ | 23.75 EUR |
| 30+ | 23.1 EUR |
| 60+ | 21.8 EUR |
| 120+ | 20.5 EUR |
| 270+ | 20.11 EUR |
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10-14 Tag (e)
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Technische Details IXFX220N17T2 IXYS
Description: MOSFET N-CH 170V 220A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 220A (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 60A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 170 V, Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 31000 pF @ 25 V.
Weitere Produktangebote IXFX220N17T2 nach Preis ab 23.45 EUR bis 25.91 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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IXFX220N17T2 | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 170V Drain current: 220A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 6.3mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||
| IXFX220N17T2 | Ixys Corporation | Trans MOSFET N-CH 170V 220A 3-Pin(3+Tab) PLUS 247 |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IXFX220N17T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFX220N17T2 |
Hersteller: Ixys Corporation
Trans MOSFET N-CH 170V 220A 3-Pin(3+Tab) PLUS 247
Trans MOSFET N-CH 170V 220A 3-Pin(3+Tab) PLUS 247
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 25.91 EUR |
| 10+ | 23.45 EUR |