IXFX220N17T2 IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Kind of channel: enhancement
Case: PLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 500nC
On-state resistance: 6.3mΩ
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
| Anzahl | Preis |
|---|---|
| 5+ | 14.84 EUR |
| 6+ | 13.21 EUR |
| 10+ | 12.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFX220N17T2 IXYS
Description: MOSFET N-CH 170V 220A PLUS247-3, Input Capacitance (Ciss) (Max) @ Vds: 31000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V, Drain to Source Voltage (Vdss): 170 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PLUS247™-3, Vgs(th) (Max) @ Id: 5V @ 8mA, Power Dissipation (Max): 1250W (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 220A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.
Weitere Produktangebote IXFX220N17T2 nach Preis ab 16.9 EUR bis 22.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFX220N17T2 | IXYS |
MOSFETs GigaMOS Trench T2 HiperFET Pwr MOSFET |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXFX220N17T2 |
|
Hersteller: IXYS
MOSFETs GigaMOS Trench T2 HiperFET Pwr MOSFET
MOSFETs GigaMOS Trench T2 HiperFET Pwr MOSFET
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 22.63 EUR |
| 10+ | 19.96 EUR |
| 30+ | 19.41 EUR |
| 60+ | 18.32 EUR |
| 120+ | 17.23 EUR |
| 270+ | 16.9 EUR |