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IXFX26N100P

IXFX26N100P Littelfuse Inc.

littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n100p_datasheet.pdf.pdf
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 26A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
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Technische Details IXFX26N100P Littelfuse Inc.

Description: MOSFET N-CH 1000V 26A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V.

Weitere Produktangebote IXFX26N100P

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IXFX26N100P IXFX26N100P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_26N100P_Datasheet.PDF MOSFETs 26 Amps 1000V
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IXFX26N100P IXFX26N100P IXYS IXFK26N100P_IXFX26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 197nC
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IXFX26N100P Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_26N100P_Datasheet.PDF
IXFX26N100P
Hersteller: IXYS
MOSFETs 26 Amps 1000V
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IXFX26N100P IXFK26N100P_IXFX26N100P.pdf
IXFX26N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 197nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH