auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 59.08 EUR |
| 10+ | 52.50 EUR |
| 30+ | 42.33 EUR |
Produktrezensionen
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Technische Details IXFX26N120P IXYS
Description: MOSFET N-CH 1200V 26A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 13A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V.
Weitere Produktangebote IXFX26N120P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IXFX26N120P | Hersteller : IXYS/Littelfuse |
 N-канальний ПТ; Udss, В = 1 200; Id = 26 А; Ptot, Вт = 960; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 16000 @ 25; Qg, нКл = 225 @ 10 В; Rds = 500 мОм @ 13 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 6,5 В @ 1 мА; TO-247-3 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFX26N120P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.2KV 26A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXFX26N120P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.2KV 26A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXFX26N120P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 26A Power dissipation: 960W Case: PLUS247™ On-state resistance: 0.5Ω Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFX26N120P | Hersteller : IXYS |
Description: MOSFET N-CH 1200V 26A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 13A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFX26N120P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 26A Power dissipation: 960W Case: PLUS247™ On-state resistance: 0.5Ω Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |