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IXFX32N80P

IXFX32N80P Littelfuse Inc.



Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 32A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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Technische Details IXFX32N80P Littelfuse Inc.

Description: MOSFET N-CH 800V 32A PLUS247-3, Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PLUS247™-3, Vgs(th) (Max) @ Id: 5V @ 8mA, Power Dissipation (Max): 830W (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.

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IXFX32N80P IXFX32N80P Hersteller : IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-32N80P-Datasheet.PDF MOSFETs 32 Amps 800V 0.27 Rds
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