auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 20.89 EUR |
| 10+ | 19.18 EUR |
| 25+ | 17.97 EUR |
| 100+ | 16.85 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFX32N80P Littelfuse
Description: MOSFET N-CH 800V 32A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V.
Weitere Produktangebote IXFX32N80P nach Preis ab 17.42 EUR bis 21.59 EUR
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IXFX32N80P | Hersteller : Littelfuse |
 Trans MOSFET N-CH 800V 32A 3-Pin(3+Tab) PLUS 247 |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFX32N80P | Hersteller : Littelfuse |
Trans MOSFET N-CH 800V 32A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXFX32N80P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 32A Power dissipation: 830W Case: PLUS247™ On-state resistance: 0.27Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFX32N80P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 800V 32A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFX32N80P | Hersteller : IXYS |
MOSFETs 32 Amps 800V 0.27 Rds |
Produkt ist nicht verfügbar |
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IXFX32N80P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 32A Power dissipation: 830W Case: PLUS247™ On-state resistance: 0.27Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |