Technische Details IXFX32N90P Littelfuse
Description: MOSFET N-CH 900V 32A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 16A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10600 pF @ 25 V.
Weitere Produktangebote IXFX32N90P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
IXFX32N90P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 900V 32A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 16A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10600 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
IXFX32N90P | Hersteller : IXYS |
MOSFETs Polar HiPerFETs MOSFET w/Fast Diode |
Produkt ist nicht verfügbar |


