IXFX360N10T Ixys Corporation
| Anzahl | Privatkunde |
|---|---|
| 7+ | 28.73 EUR |
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14-21 Tag (e)
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7 Stücke
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Technische Details IXFX360N10T Ixys Corporation
Description: MOSFET N-CH 100V 360A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5V @ 3mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 525 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 33000 pF @ 25 V.
Weitere Produktangebote IXFX360N10T nach Preis ab 17.7 EUR bis 33.05 EUR
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IXFX360N10T | IXYS |
 MOSFETs TRENCH HIPERFET PWR MOSFET 100V 360A |
auf Bestellung 825 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFX360N10T | IXYS |
Description: MOSFET N-CH 100V 360A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 3mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 525 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 33000 pF @ 25 V |
auf Bestellung 393 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFX360N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 360A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 2.9mΩ Mounting: THT Kind of channel: enhancement Gate charge: 525nC Features of semiconductor devices: thrench gate power mosfet Kind of package: tube |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFX360N10T |
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Hersteller: IXYS
MOSFETs TRENCH HIPERFET PWR MOSFET 100V 360A
MOSFETs TRENCH HIPERFET PWR MOSFET 100V 360A
auf Bestellung 825 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 32.36 EUR |
| 10+ | 19.67 EUR |
| IXFX360N10T |
|
Hersteller: IXYS
Description: MOSFET N-CH 100V 360A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 525 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33000 pF @ 25 V
Description: MOSFET N-CH 100V 360A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 525 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33000 pF @ 25 V
auf Bestellung 393 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 33.05 EUR |
| 30+ | 20.44 EUR |
| 60+ | 18.96 EUR |
| 120+ | 17.7 EUR |
| IXFX360N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.9mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 525nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.9mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 525nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)