IXFX360N10T IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Drain-source voltage: 100V
Drain current: 360A
Case: PLUS247™
Polarisation: unipolar
On-state resistance: 2.9mΩ
Power dissipation: 1.25kW
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 525nC
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 17.39 EUR |
| 6+ | 12.41 EUR |
| 7+ | 11.74 EUR |
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Technische Details IXFX360N10T IXYS
Description: MOSFET N-CH 100V 360A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5V @ 3mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 525 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 33000 pF @ 25 V.
Weitere Produktangebote IXFX360N10T nach Preis ab 11.74 EUR bis 23.86 EUR
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IXFX360N10T | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™ Drain-source voltage: 100V Drain current: 360A Case: PLUS247™ Polarisation: unipolar On-state resistance: 2.9mΩ Power dissipation: 1.25kW Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 525nC Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFX360N10T | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 100V 360A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 3mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 525 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 33000 pF @ 25 V |
auf Bestellung 295 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFX360N10T | Hersteller : Ixys Corporation |
Trans MOSFET N-CH 100V 360A 3-Pin(3+Tab) PLUS 247 |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFX360N10T | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 360A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |