
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
7+ | 23.94 EUR |
30+ | 17.57 EUR |
120+ | 16.21 EUR |
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Technische Details IXFX420N10T Littelfuse
Description: MOSFET N-CH 100V 420A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 420A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V, Power Dissipation (Max): 1670W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 47000 pF @ 25 V.
Weitere Produktangebote IXFX420N10T nach Preis ab 21.58 EUR bis 33.14 EUR
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IXFX420N10T | Hersteller : IXYS |
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auf Bestellung 279 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFX420N10T | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 420A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V Power Dissipation (Max): 1670W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 47000 pF @ 25 V |
auf Bestellung 249 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFX420N10T | Hersteller : Littelfuse |
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auf Bestellung 660 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFX420N10T | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFX420N10T | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 420A Power dissipation: 1670W Case: PLUS247™ On-state resistance: 2.6mΩ Mounting: THT Gate charge: 670nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFX420N10T | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 420A Power dissipation: 1670W Case: PLUS247™ On-state resistance: 2.6mΩ Mounting: THT Gate charge: 670nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |