auf Bestellung 204 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 53.52 EUR |
| 10+ | 44.26 EUR |
| 30+ | 42.98 EUR |
| 60+ | 42.15 EUR |
| 120+ | 41.36 EUR |
| 270+ | 40.85 EUR |
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Technische Details IXFX52N100X IXYS
Description: MOSFET N-CH 1000V 52A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 6V @ 4mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V.
Weitere Produktangebote IXFX52N100X
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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IXFX52N100X | Hersteller : Littelfuse |
 Power MOSFET |
Produkt ist nicht verfügbar |
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IXFX52N100X | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 52A PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 6V @ 4mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V |
Produkt ist nicht verfügbar |