auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 50.04 EUR |
| 10+ | 45.46 EUR |
| 30+ | 43.00 EUR |
| 60+ | 38.00 EUR |
Produktrezensionen
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Technische Details IXFX80N50Q3 IXYS
Description: MOSFET N-CH 500V 80A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V.
Weitere Produktangebote IXFX80N50Q3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IXFX80N50Q3 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 500V 80A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXFX80N50Q3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 80A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXFX80N50Q3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 80A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXFX80N50Q3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 65mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFX80N50Q3 | Hersteller : IXYS |
Description: MOSFET N-CH 500V 80A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 8mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFX80N50Q3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 65mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |