IXFX88N20Q IXYS
Hersteller: IXYS
Description: MOSFET N-CH 200V 88A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Box
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Technische Details IXFX88N20Q IXYS
Description: MOSFET N-CH 200V 88A PLUS247-3, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PLUS247™-3, Vgs(th) (Max) @ Id: 4V @ 4mA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V, Current - Continuous Drain (Id) @ 25°C: 88A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Box.
Weitere Produktangebote IXFX88N20Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IXFX88N20Q | Hersteller : IXYS |
 MOSFET 88 Amps 200V 0.022W Rds |
Produkt ist nicht verfügbar |