IXFY4N85X IXYS
Hersteller: IXYSDescription: MOSFET N-CH 850V 3.5A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 25 V
auf Bestellung 1610 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.53 EUR |
| 70+ | 3.73 EUR |
| 140+ | 3.41 EUR |
| 560+ | 2.91 EUR |
| 1050+ | 2.83 EUR |
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Technische Details IXFY4N85X IXYS
Description: MOSFET N-CH 850V 3.5A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 25 V.
Weitere Produktangebote IXFY4N85X nach Preis ab 2.62 EUR bis 11.91 EUR
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IXFY4N85X | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W Mounting: SMD Case: TO252 On-state resistance: 2.5Ω Drain current: 3.5A Pulsed drain current: 10A Gate-source voltage: ±30V Power dissipation: 150W Drain-source voltage: 850V Kind of channel: enhancement Technology: HiPerFET™; X-Class Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: ultra junction x-class Polarisation: unipolar Gate charge: 7nC Reverse recovery time: 170ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFY4N85X | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W Mounting: SMD Case: TO252 On-state resistance: 2.5Ω Drain current: 3.5A Pulsed drain current: 10A Gate-source voltage: ±30V Power dissipation: 150W Drain-source voltage: 850V Kind of channel: enhancement Technology: HiPerFET™; X-Class Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: ultra junction x-class Polarisation: unipolar Gate charge: 7nC Reverse recovery time: 170ns |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXFY4N85X | Hersteller : IXYS |
MOSFET 850V/3.5A Ultra Junction X-Class HiPerFET Power MOSFET, TO-252 |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |