IXFY4N85X IXYS
Hersteller: IXYS
Description: MOSFET N-CH 850V 3.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 850 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.96 EUR |
| 70+ | 4.44 EUR |
| 140+ | 4.06 EUR |
| 560+ | 3.46 EUR |
| 1050+ | 3.37 EUR |
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Technische Details IXFY4N85X IXYS
Description: MOSFET N-CH 850V 3.5A TO252, Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Drain to Source Voltage (Vdss): 850 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 5.5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.
Weitere Produktangebote IXFY4N85X nach Preis ab 14.17 EUR bis 14.17 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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IXFY4N85X | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W Mounting: SMD Pulsed drain current: 10A Power dissipation: 150W Gate charge: 7nC Polarisation: unipolar Technology: HiPerFET™; X-Class Features of semiconductor devices: ultra junction x-class Drain current: 3.5A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO252 On-state resistance: 2.5Ω Reverse recovery time: 170ns |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXFY4N85X | IXYS |
MOSFET 850V/3.5A Ultra Junction X-Class HiPerFET Power MOSFET, TO-252 |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFY4N85X |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO252
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO252
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 14.17 EUR |
| IXFY4N85X |
|
Hersteller: IXYS
MOSFET 850V/3.5A Ultra Junction X-Class HiPerFET Power MOSFET, TO-252
MOSFET 850V/3.5A Ultra Junction X-Class HiPerFET Power MOSFET, TO-252
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)