Produkte > IXYS > IXFZ520N075T2
IXFZ520N075T2

IXFZ520N075T2 IXYS


media-3321781.pdf Hersteller: IXYS
MOSFET TrenchT2 HiperFETs Gate TrenchT2 MOSFET
auf Bestellung 300 Stücke:

Lieferzeit 329-343 Tag (e)
Anzahl Preis ohne MwSt
1+106.78 EUR
10+ 99.61 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details IXFZ520N075T2 IXYS

Description: MOSFET N-CH 75V 465A DE475, Packaging: Tube, Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 465A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 4V @ 8mA, Supplier Device Package: DE475, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V.

Weitere Produktangebote IXFZ520N075T2

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IXFZ520N075T2 IXFZ520N075T2 Hersteller : Littelfuse osfets_n-channel_trench_gate_ixfz520n075t2_datasheet.pdf.pdf Trans MOSFET N-CH 75V 465A 6-Pin Case DE-475
Produkt ist nicht verfügbar
IXFZ520N075T2 Hersteller : IXYS IXFZ520N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 420A
Power dissipation: 600W
Case: DE475
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFZ520N075T2 IXFZ520N075T2 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixfz520n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 465A DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 465A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: DE475
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
Produkt ist nicht verfügbar
IXFZ520N075T2 Hersteller : IXYS IXFZ520N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 420A
Power dissipation: 600W
Case: DE475
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar