| Anzahl | Preis |
|---|---|
| 1+ | 7.99 EUR |
| 10+ | 4.91 EUR |
| 100+ | 4.75 EUR |
| 500+ | 3.85 EUR |
| 1000+ | 3.68 EUR |
| 2500+ | 3.66 EUR |
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Technische Details IXGA12N120A3 IXYS
Description: IGBT 1200V 22A 100W TO263, IGBT Type: PT, Supplier Device Package: TO-263AA, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Power - Max: 100 W, Current - Collector Pulsed (Icm): 60 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 22 A, Gate Charge: 20.4 nC.
Weitere Produktangebote IXGA12N120A3
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IXGA12N120A3 | Hersteller : IXYS |
 Description: IGBT 1200V 22A 100W TO263IGBT Type: PT Supplier Device Package: TO-263AA Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Power - Max: 100 W Current - Collector Pulsed (Icm): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 22 A Gate Charge: 20.4 nC |
Produkt ist nicht verfügbar |
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IXGA12N120A3 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263 Collector current: 12A Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Technology: GenX3™; PT Type of transistor: IGBT Kind of package: tube Gate charge: 20.4nC Turn-on time: 202ns Turn-off time: 1545ns Power dissipation: 100W Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |