auf Bestellung 486 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.99 EUR |
| 10+ | 4.91 EUR |
| 100+ | 4.75 EUR |
| 500+ | 3.85 EUR |
| 1000+ | 3.68 EUR |
| 2500+ | 3.66 EUR |
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Technische Details IXGA12N120A3 IXYS
Description: IGBT 1200V 22A 100W TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A, Supplier Device Package: TO-263AA, IGBT Type: PT, Gate Charge: 20.4 nC, Current - Collector (Ic) (Max): 22 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 100 W.
Weitere Produktangebote IXGA12N120A3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXGA12N120A3 | Hersteller : Littelfuse |
 Trans IGBT Chip N-CH 1200V 22A 100mW 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IXGA12N120A3 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 100W Case: TO263 Mounting: SMD Gate charge: 20.4nC Kind of package: tube Collector-emitter voltage: 1.2kV Pulsed collector current: 60A Turn-on time: 202ns Turn-off time: 1545ns Gate-emitter voltage: ±20V Collector current: 12A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXGA12N120A3 | Hersteller : IXYS |
Description: IGBT 1200V 22A 100W TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-263AA IGBT Type: PT Gate Charge: 20.4 nC Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 100 W |
Produkt ist nicht verfügbar |
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IXGA12N120A3 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 100W Case: TO263 Mounting: SMD Gate charge: 20.4nC Kind of package: tube Collector-emitter voltage: 1.2kV Pulsed collector current: 60A Turn-on time: 202ns Turn-off time: 1545ns Gate-emitter voltage: ±20V Collector current: 12A |
Produkt ist nicht verfügbar |