| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.97 EUR |
| 10+ | 5.78 EUR |
| 100+ | 5.09 EUR |
| 500+ | 4.74 EUR |
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Technische Details IXGA12N120A3 IXYS
Description: IGBT 1200V 22A 100W TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A, Supplier Device Package: TO-263AA, IGBT Type: PT, Gate Charge: 20.4 nC, Current - Collector (Ic) (Max): 22 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 100 W.
Weitere Produktangebote IXGA12N120A3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXGA12N120A3 | IXYS |
 Description: IGBT 1200V 22A 100W TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-263AA IGBT Type: PT Gate Charge: 20.4 nC Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 100 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXGA12N120A3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263 Case: TO263 Mounting: SMD Kind of package: tube Technology: GenX3™; PT Pulsed collector current: 60A Type of transistor: IGBT Turn-on time: 202ns Turn-off time: 1545ns Gate-emitter voltage: ±20V Collector current: 12A Collector-emitter voltage: 1.2kV Power dissipation: 100W Gate charge: 20.4nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXGA12N120A3 |
|
Hersteller: IXYS
Description: IGBT 1200V 22A 100W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
Description: IGBT 1200V 22A 100W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGA12N120A3 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Technology: GenX3™; PT
Pulsed collector current: 60A
Type of transistor: IGBT
Turn-on time: 202ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 12A
Collector-emitter voltage: 1.2kV
Power dissipation: 100W
Gate charge: 20.4nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Technology: GenX3™; PT
Pulsed collector current: 60A
Type of transistor: IGBT
Turn-on time: 202ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 12A
Collector-emitter voltage: 1.2kV
Power dissipation: 100W
Gate charge: 20.4nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH