Produkte > IXYS > IXGA8N100
IXGA8N100

IXGA8N100 IXYS


littelfuse_discrete_igbts_pt_ixg_8n100_datasheet.pdf.pdf Hersteller: IXYS
Description: IGBT 1000V 16A 54W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 8A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/600ns
Switching Energy: 2.3mJ (off)
Test Condition: 800V, 8A, 120Ohm, 15V
Gate Charge: 26.5 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 54 W
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details IXGA8N100 IXYS

Description: IGBT 1000V 16A 54W TO263, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 8A, Supplier Device Package: TO-263AA, IGBT Type: PT, Td (on/off) @ 25°C: 15ns/600ns, Switching Energy: 2.3mJ (off), Test Condition: 800V, 8A, 120Ohm, 15V, Gate Charge: 26.5 nC, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Current - Collector Pulsed (Icm): 32 A, Power - Max: 54 W.

Weitere Produktangebote IXGA8N100

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IXGA8N100 IXGA8N100 Hersteller : IXYS media-3320954.pdf IGBT Transistors 16 Amps 1000V 2.7 Rds
Produkt ist nicht verfügbar