auf Bestellung 151 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 40.67 EUR |
| 10+ | 36.13 EUR |
| 50+ | 35.22 EUR |
| 100+ | 31.59 EUR |
| 500+ | 27.12 EUR |
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Technische Details IXGF32N170 IXYS
Description: IGBT 1700V 44A 200W I4PAC, Packaging: Tube, Package / Case: i4-Pac™-5 (3 Leads), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 32A, Supplier Device Package: ISOPLUS i4-PAC™, IGBT Type: NPT, Td (on/off) @ 25°C: 45ns/270ns, Switching Energy: 10.6mJ (off), Test Condition: 1020V, 32A, 2.7Ohm, 15V, Gate Charge: 146 nC, Current - Collector (Ic) (Max): 44 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 200 W.
Weitere Produktangebote IXGF32N170 nach Preis ab 31.38 EUR bis 40.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
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| IXGF32N170 | Hersteller : IXYS |
 Description: IGBT 1700V 44A 200W I4PACPackaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 32A Supplier Device Package: ISOPLUS i4-PAC™ IGBT Type: NPT Td (on/off) @ 25°C: 45ns/270ns Switching Energy: 10.6mJ (off) Test Condition: 1020V, 32A, 2.7Ohm, 15V Gate Charge: 146 nC Current - Collector (Ic) (Max): 44 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 200 A Power - Max: 200 W |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGF32N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 19A Power dissipation: 200W Case: ISOPLUS i4-pac™ x024c Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 146nC Kind of package: tube Turn-on time: 90ns Turn-off time: 920ns Features of semiconductor devices: high voltage Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXGF32N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 19A Power dissipation: 200W Case: ISOPLUS i4-pac™ x024c Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 146nC Kind of package: tube Turn-on time: 90ns Turn-off time: 920ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |