auf Bestellung 378 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 24.01 EUR |
| 10+ | 14.77 EUR |
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Technische Details IXGH10N170 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3, Mounting: THT, Case: TO247-3, Kind of package: tube, Gate charge: 32nC, Turn-on time: 0.3µs, Turn-off time: 630ns, Collector current: 10A, Pulsed collector current: 70A, Gate-emitter voltage: ±20V, Power dissipation: 110W, Collector-emitter voltage: 1.7kV, Features of semiconductor devices: high voltage, Type of transistor: IGBT, Technology: NPT.
Weitere Produktangebote IXGH10N170 nach Preis ab 14.84 EUR bis 24.11 EUR
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IXGH10N170 | Hersteller : IXYS |
 Description: IGBT NPT 1700V 20A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A Supplier Device Package: TO-247AD IGBT Type: NPT Gate Charge: 32 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 70 A Power - Max: 110 W |
auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGH10N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 32nC Turn-on time: 0.3µs Turn-off time: 630ns Collector current: 10A Pulsed collector current: 70A Gate-emitter voltage: ±20V Power dissipation: 110W Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage Type of transistor: IGBT Technology: NPT |
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