auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 26.68 EUR |
| 10+ | 23.5 EUR |
| 30+ | 22.88 EUR |
| 60+ | 21.61 EUR |
| 120+ | 20.33 EUR |
| 270+ | 19.69 EUR |
| 510+ | 18.9 EUR |
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Technische Details IXGH25N160 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3, Type of transistor: IGBT, Technology: NPT, Collector-emitter voltage: 1.6kV, Collector current: 25A, Power dissipation: 300W, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 200A, Mounting: THT, Gate charge: 84nC, Kind of package: tube, Turn-on time: 283ns, Turn-off time: 526ns, Features of semiconductor devices: high voltage, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXGH25N160
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXGH25N160 | Hersteller : Littelfuse |
 Trans IGBT Chip N-CH 1600V 75A 300000mW 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXGH25N160 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.6kV Collector current: 25A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 84nC Kind of package: tube Turn-on time: 283ns Turn-off time: 526ns Features of semiconductor devices: high voltage Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXGH25N160 | Hersteller : IXYS |
Description: IGBT 1600V 75A 300W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4.7V @ 20V, 100A Supplier Device Package: TO-247AD IGBT Type: NPT Gate Charge: 84 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W |
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IXGH25N160 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.6kV Collector current: 25A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 84nC Kind of package: tube Turn-on time: 283ns Turn-off time: 526ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |