IXGK100N170 IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Turn-on time: 285ns
Pulsed collector current: 600A
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Collector current: 100A
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
Case: TO264
Turn-off time: 720ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 44.07 EUR |
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Technische Details IXGK100N170 IXYS
Description: IGBT PT 1000V 120A TO-264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A, Supplier Device Package: PLUS264™, Td (on/off) @ 25°C: 35ns/285ns, Test Condition: 850V, 100A, 1Ohm, 15V, Gate Charge: 425 nC, Current - Collector (Ic) (Max): 170 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 600 A, Power - Max: 830 W.
Weitere Produktangebote IXGK100N170 nach Preis ab 44.07 EUR bis 103.22 EUR
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IXGK100N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264 Mounting: THT Turn-on time: 285ns Pulsed collector current: 600A Power dissipation: 830W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 425nC Technology: NPT Collector current: 100A Gate-emitter voltage: ±20V Type of transistor: IGBT Collector-emitter voltage: 1.7kV Case: TO264 Turn-off time: 720ns |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGK100N170 | Hersteller : IXYS |
Description: IGBT PT 1000V 120A TO-264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A Supplier Device Package: PLUS264™ Td (on/off) @ 25°C: 35ns/285ns Test Condition: 850V, 100A, 1Ohm, 15V Gate Charge: 425 nC Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 600 A Power - Max: 830 W |
auf Bestellung 21 Stücke: Lieferzeit 21-28 Tag (e) |
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IXGK100N170 | Hersteller : IXYS |
IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A |
auf Bestellung 1 Stücke: Lieferzeit 14-28 Tag (e) |
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IXGK100N170 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 1700V 170A 830000mW 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
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IXGK100N170 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 1700V 170A 830W 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |