
IXGK100N170 IXYS
Hersteller: IXYS
Description: IGBT 1700V 170A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 35ns/285ns
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 425 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
Description: IGBT 1700V 170A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 35ns/285ns
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 425 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
auf Bestellung 254 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 77.60 EUR |
25+ | 55.39 EUR |
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Technische Details IXGK100N170 IXYS
Description: IGBT 1700V 170A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A, Supplier Device Package: PLUS264™, Td (on/off) @ 25°C: 35ns/285ns, Test Condition: 850V, 100A, 1Ohm, 15V, Gate Charge: 425 nC, Current - Collector (Ic) (Max): 170 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 600 A, Power - Max: 830 W.
Weitere Produktangebote IXGK100N170 nach Preis ab 67.90 EUR bis 83.85 EUR
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IXGK100N170 | Hersteller : IXYS |
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auf Bestellung 417 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGK100N170 | Hersteller : Littelfuse |
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IXGK100N170 | Hersteller : Littelfuse |
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IXGK100N170 | Hersteller : IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264 Mounting: THT Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 600A Turn-on time: 285ns Turn-off time: 720ns Type of transistor: IGBT Power dissipation: 830W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 425nC Technology: NPT Case: TO264 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXGK100N170 | Hersteller : IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264 Mounting: THT Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 600A Turn-on time: 285ns Turn-off time: 720ns Type of transistor: IGBT Power dissipation: 830W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 425nC Technology: NPT Case: TO264 |
Produkt ist nicht verfügbar |