IXGK50N120C3H1 IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Mounting: THT
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Kind of package: tube
Gate charge: 196nC
Technology: GenX3™; PT
Anzahl je Verpackung: 1 Stücke
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Technische Details IXGK50N120C3H1 IXYS
Description: IGBT PT 1200V 95A TO-264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 75 ns, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A, Supplier Device Package: TO-264 (IXGK), IGBT Type: PT, Td (on/off) @ 25°C: 31ns/123ns, Switching Energy: 2mJ (on), 630µJ (off), Test Condition: 600V, 40A, 2Ohm, 15V, Gate Charge: 196 nC, Current - Collector (Ic) (Max): 95 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 460 W.
Weitere Produktangebote IXGK50N120C3H1
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IXGK50N120C3H1 | Hersteller : IXYS |
Description: IGBT PT 1200V 95A TO-264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 31ns/123ns Switching Energy: 2mJ (on), 630µJ (off) Test Condition: 600V, 40A, 2Ohm, 15V Gate Charge: 196 nC Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 240 A Power - Max: 460 W |
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IXGK50N120C3H1 | Hersteller : IXYS |
IGBTs High Frequency Range 40khz C-IGBT w/Diode |
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IXGK50N120C3H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264 Mounting: THT Case: TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Turn-on time: 60ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 460W Kind of package: tube Gate charge: 196nC Technology: GenX3™; PT |
Produkt ist nicht verfügbar |