IXGK82N120A3 IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
Anzahl je Verpackung: 1 Stücke
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Technische Details IXGK82N120A3 IXYS
Description: IGBT 1200V 260A 1250W TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A, Supplier Device Package: TO-264 (IXGK), IGBT Type: PT, Td (on/off) @ 25°C: 34ns/265ns, Switching Energy: 5.5mJ (on), 12.5mJ (off), Test Condition: 600V, 80A, 2Ohm, 15V, Gate Charge: 340 nC, Current - Collector (Ic) (Max): 260 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 580 A, Power - Max: 1250 W.
Weitere Produktangebote IXGK82N120A3
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IXGK82N120A3 | Hersteller : IXYS |
Description: IGBT 1200V 260A 1250W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 34ns/265ns Switching Energy: 5.5mJ (on), 12.5mJ (off) Test Condition: 600V, 80A, 2Ohm, 15V Gate Charge: 340 nC Current - Collector (Ic) (Max): 260 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 580 A Power - Max: 1250 W |
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IXGK82N120A3 | Hersteller : IXYS |
IGBT Transistors GenX3 1200V IGBTs |
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IXGK82N120A3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 580A Mounting: THT Gate charge: 340nC Kind of package: tube Turn-on time: 109ns Turn-off time: 1.59µs |
Produkt ist nicht verfügbar |