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IXGK82N120B3

IXGK82N120B3 IXYS

littelfuse_discrete_igbts_pt_ixg_82n120b3_datasheet.pdf.pdf
Hersteller: IXYS
Description: IGBT 1200V 230A 1250W TO264
Packaging: Tube
Current - Collector (Ic) (Max): 230 A
Gate Charge: 350 nC
Test Condition: 600V, 80A, 2Ohm, 15V
Switching Energy: 5mJ (on), 3.3mJ (off)
Td (on/off) @ 25°C: 30ns/210ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXGK)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Power - Max: 1250 W
Current - Collector Pulsed (Icm): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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Technische Details IXGK82N120B3 IXYS

Description: IGBT 1200V 230A 1250W TO264, Packaging: Tube, Current - Collector (Ic) (Max): 230 A, Gate Charge: 350 nC, Test Condition: 600V, 80A, 2Ohm, 15V, Switching Energy: 5mJ (on), 3.3mJ (off), Td (on/off) @ 25°C: 30ns/210ns, IGBT Type: PT, Supplier Device Package: TO-264 (IXGK), Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Power - Max: 1250 W, Current - Collector Pulsed (Icm): 500 A, Voltage - Collector Emitter Breakdown (Max): 1200 V.

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IXGK82N120B3 IXGK82N120B3 Hersteller : IXYS media-3321237.pdf IGBT Transistors GenX3 1200V IGBTs
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