Technische Details IXGN400N60A3 IXYS
Description: IGBT MOD 600V 400A 830W SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: SOT-227B, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 400 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 830 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 32 nF @ 25 V.
Weitere Produktangebote IXGN400N60A3
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IXGN400N60A3 | Hersteller : Littelfuse |
Trans IGBT Module N-CH 600V 400A 830W 4-Pin SOT-227B |
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| IXGN400N60A3 |
SOT-227B Транзистори |
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IXGN400N60A3 | Hersteller : IXYS |
Description: IGBT MOD 600V 400A 830W SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 830 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 32 nF @ 25 V |
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IXGN400N60A3 | Hersteller : IXYS |
Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B Case: SOT227B Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: IGBT Technology: GenX3™; PT Gate-emitter voltage: ±20V Collector current: 190A Pulsed collector current: 800A Power dissipation: 830W Semiconductor structure: single transistor Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |




