IXGN50N120C3H1 IXYS
Hersteller: IXYS
Description: IGBT MOD 1200V 95A 460W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 460 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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Technische Details IXGN50N120C3H1 IXYS
Description: IGBT MOD 1200V 95A 460W SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A, NTC Thermistor: No, Supplier Device Package: SOT-227B, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 95 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 460 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V.
Weitere Produktangebote IXGN50N120C3H1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXGN50N120C3H1 | IXYS |
IGBT Modules High Frequency Range >40khz CIGBT w/Diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXGN50N120C3H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B Technology: GenX3™; PT Collector current: 50A Power dissipation: 460W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 240A Semiconductor structure: single transistor Type of semiconductor module: IGBT Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXGN50N120C3H1 |
|
Hersteller: IXYS
IGBT Modules High Frequency Range >40khz CIGBT w/Diode
IGBT Modules High Frequency Range >40khz CIGBT w/Diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGN50N120C3H1 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: GenX3™; PT
Collector current: 50A
Power dissipation: 460W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: GenX3™; PT
Collector current: 50A
Power dissipation: 460W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH