IXGN50N120C3H1 IXYS
Hersteller: IXYS
Description: IGBT MOD 1200V 95A 460W SOT-227B
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 460 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 95 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: SOT-227B
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Technische Details IXGN50N120C3H1 IXYS
Description: IGBT MOD 1200V 95A 460W SOT-227B, Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 460 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 95 A, Part Status: Active, IGBT Type: PT, Supplier Device Package: SOT-227B, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote IXGN50N120C3H1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXGN50N120C3H1 | IXYS |
IGBT Modules High Frequency Range >40khz CIGBT w/Diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXGN50N120C3H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B Technology: GenX3™; PT Power dissipation: 460W Case: SOT227B Semiconductor structure: single transistor Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 50A Electrical mounting: screw Pulsed collector current: 240A Type of semiconductor module: IGBT Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXGN50N120C3H1 |
|
Hersteller: IXYS
IGBT Modules High Frequency Range >40khz CIGBT w/Diode
IGBT Modules High Frequency Range >40khz CIGBT w/Diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGN50N120C3H1 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: GenX3™; PT
Power dissipation: 460W
Case: SOT227B
Semiconductor structure: single transistor
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Electrical mounting: screw
Pulsed collector current: 240A
Type of semiconductor module: IGBT
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: GenX3™; PT
Power dissipation: 460W
Case: SOT227B
Semiconductor structure: single transistor
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Electrical mounting: screw
Pulsed collector current: 240A
Type of semiconductor module: IGBT
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH