Technische Details IXGN50N120C3H1 Littelfuse
Description: IGBT MOD 1200V 95A 460W SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A, NTC Thermistor: No, Supplier Device Package: SOT-227B, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 95 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 460 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V.
Weitere Produktangebote IXGN50N120C3H1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXGN50N120C3H1 | Hersteller : IXYS |
 Category: IGBT modulesDescription: Single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B; screw; 460W Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Power dissipation: 460W Electrical mounting: screw Mechanical mounting: screw Technology: GenX3™; PT Type of semiconductor module: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
IXGN50N120C3H1 | Hersteller : IXYS |
Description: IGBT MOD 1200V 95A 460W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 460 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
IXGN50N120C3H1 | Hersteller : IXYS |
IGBT Modules High Frequency Range >40khz CIGBT w/Diode |
Produkt ist nicht verfügbar |
|
|
|
IXGN50N120C3H1 | Hersteller : IXYS |
Category: IGBT modules Description: Single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B; screw; 460W Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Power dissipation: 460W Electrical mounting: screw Mechanical mounting: screw Technology: GenX3™; PT Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |