IXGN50N120C3H1 IXYS
Hersteller: IXYS
Description: IGBT MOD 1200V 95A 460W SOT227B
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 460 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 95 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: SOT-227B
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Technische Details IXGN50N120C3H1 IXYS
Description: IGBT MOD 1200V 95A 460W SOT227B, Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 460 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 95 A, Part Status: Active, IGBT Type: PT, Supplier Device Package: SOT-227B, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
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IXGN50N120C3H1 | Hersteller : IXYS |
IGBT Modules High Frequency Range >40khz CIGBT w/Diode |
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IXGN50N120C3H1 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B Case: SOT227B Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: IGBT Technology: GenX3™; PT Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Power dissipation: 460W Semiconductor structure: single transistor Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |