auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.9 EUR |
| 10+ | 6.2 EUR |
| 100+ | 4.65 EUR |
| 250+ | 4.52 EUR |
| 500+ | 4.21 EUR |
| 1000+ | 3.56 EUR |
| 2500+ | 3.38 EUR |
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Technische Details IXGP12N120A3 IXYS
Description: IGBT 1200V 22A 100W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A, Supplier Device Package: TO-220-3, IGBT Type: PT, Gate Charge: 20.4 nC, Part Status: Active, Current - Collector (Ic) (Max): 22 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 100 W.
Weitere Produktangebote IXGP12N120A3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IXGP12N120A3 | Hersteller : Littelfuse |
 Trans IGBT Chip N-CH 1200V 22A 100000mW 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXGP12N120A3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 12A Power dissipation: 100W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 20.4nC Kind of package: tube Turn-on time: 202ns Turn-off time: 1545ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXGP12N120A3 | Hersteller : IXYS |
Description: IGBT 1200V 22A 100W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-220-3 IGBT Type: PT Gate Charge: 20.4 nC Part Status: Active Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 100 W |
Produkt ist nicht verfügbar |
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IXGP12N120A3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 12A Power dissipation: 100W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 20.4nC Kind of package: tube Turn-on time: 202ns Turn-off time: 1545ns |
Produkt ist nicht verfügbar |