IXGP42N30C3 IXYS

Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO220-3
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 300V
Collector current: 42A
Power dissipation: 223W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 84A
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 113ns
Anzahl je Verpackung: 1 Stücke
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Technische Details IXGP42N30C3 IXYS
Description: IGBT 300V 223W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A, Supplier Device Package: TO-220-3, IGBT Type: PT, Td (on/off) @ 25°C: 21ns/113ns, Switching Energy: 120µJ (on), 150µJ (off), Test Condition: 200V, 21A, 10Ohm, 15V, Gate Charge: 76 nC, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector Pulsed (Icm): 250 A, Power - Max: 223 W.
Weitere Produktangebote IXGP42N30C3
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IXGP42N30C3 | Hersteller : IXYS |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 21ns/113ns Switching Energy: 120µJ (on), 150µJ (off) Test Condition: 200V, 21A, 10Ohm, 15V Gate Charge: 76 nC Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector Pulsed (Icm): 250 A Power - Max: 223 W |
Produkt ist nicht verfügbar |
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IXGP42N30C3 | Hersteller : IXYS |
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Produkt ist nicht verfügbar |
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IXGP42N30C3 | Hersteller : IXYS |
![]() Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO220-3 Type of transistor: IGBT Technology: GenX3™ Collector-emitter voltage: 300V Collector current: 42A Power dissipation: 223W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 84A Mounting: THT Gate charge: 76nC Kind of package: tube Turn-on time: 21ns Turn-off time: 113ns |
Produkt ist nicht verfügbar |