IXGR32N90B2D1 IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Type of transistor: IGBT
Technology: HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 22A
Power dissipation: 160W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 42ns
Turn-off time: 690ns
Anzahl je Verpackung: 1 Stücke
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Technische Details IXGR32N90B2D1 IXYS
Description: IGBT PT 900V 47A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 190 ns, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A, Supplier Device Package: ISOPLUS247™, IGBT Type: PT, Td (on/off) @ 25°C: 20ns/260ns, Switching Energy: 2.2mJ (off), Test Condition: 720V, 32A, 5Ohm, 15V, Gate Charge: 89 nC, Part Status: Active, Current - Collector (Ic) (Max): 47 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 160 W.
Weitere Produktangebote IXGR32N90B2D1
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IXGR32N90B2D1 | Hersteller : IXYS |
Description: IGBT PT 900V 47A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 190 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 20ns/260ns Switching Energy: 2.2mJ (off) Test Condition: 720V, 32A, 5Ohm, 15V Gate Charge: 89 nC Part Status: Active Current - Collector (Ic) (Max): 47 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 200 A Power - Max: 160 W |
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IXGR32N90B2D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™ Type of transistor: IGBT Technology: HiPerFAST™; PT Collector-emitter voltage: 900V Collector current: 22A Power dissipation: 160W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 89nC Kind of package: tube Turn-on time: 42ns Turn-off time: 690ns |
Produkt ist nicht verfügbar |