IXGR32N90B2D1 IXYS
Hersteller: IXYS
Description: IGBT PT 900V 47A ISOPLUS247
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 47 A
Part Status: Active
Gate Charge: 89 nC
Test Condition: 720V, 32A, 5Ohm, 15V
Switching Energy: 2.2mJ (off)
Td (on/off) @ 25°C: 20ns/260ns
IGBT Type: PT
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
Reverse Recovery Time (trr): 190 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 160 W
Current - Collector Pulsed (Icm): 200 A
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Technische Details IXGR32N90B2D1 IXYS
Description: IGBT PT 900V 47A ISOPLUS247, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector (Ic) (Max): 47 A, Part Status: Active, Gate Charge: 89 nC, Test Condition: 720V, 32A, 5Ohm, 15V, Switching Energy: 2.2mJ (off), Td (on/off) @ 25°C: 20ns/260ns, IGBT Type: PT, Supplier Device Package: ISOPLUS247™, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A, Reverse Recovery Time (trr): 190 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 160 W, Current - Collector Pulsed (Icm): 200 A.
Weitere Produktangebote IXGR32N90B2D1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXGR32N90B2D1 | Hersteller : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™ Gate charge: 89nC Turn-on time: 42ns Turn-off time: 690ns Gate-emitter voltage: ±20V Collector current: 22A Power dissipation: 160W Pulsed collector current: 200A Collector-emitter voltage: 900V Case: PLUS247™ Technology: HiPerFAST™; PT Type of transistor: IGBT Kind of package: tube Mounting: THT |
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