IXGR32N90B2D1 IXYS
Hersteller: IXYS
Description: IGBT PT 900V 47A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 190 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/260ns
Switching Energy: 2.2mJ (off)
Test Condition: 720V, 32A, 5Ohm, 15V
Gate Charge: 89 nC
Part Status: Active
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 160 W
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Technische Details IXGR32N90B2D1 IXYS
Description: IGBT PT 900V 47A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 190 ns, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A, Supplier Device Package: ISOPLUS247™, IGBT Type: PT, Td (on/off) @ 25°C: 20ns/260ns, Switching Energy: 2.2mJ (off), Test Condition: 720V, 32A, 5Ohm, 15V, Gate Charge: 89 nC, Part Status: Active, Current - Collector (Ic) (Max): 47 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 160 W.
Weitere Produktangebote IXGR32N90B2D1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXGR32N90B2D1 | IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™ Mounting: THT Gate charge: 89nC Technology: HiPerFAST™; PT Pulsed collector current: 200A Type of transistor: IGBT Turn-on time: 42ns Kind of package: tube Case: PLUS247™ Turn-off time: 690ns Gate-emitter voltage: ±20V Collector current: 22A Collector-emitter voltage: 900V Power dissipation: 160W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXGR32N90B2D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Mounting: THT
Gate charge: 89nC
Technology: HiPerFAST™; PT
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 42ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 690ns
Gate-emitter voltage: ±20V
Collector current: 22A
Collector-emitter voltage: 900V
Power dissipation: 160W
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Mounting: THT
Gate charge: 89nC
Technology: HiPerFAST™; PT
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 42ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 690ns
Gate-emitter voltage: ±20V
Collector current: 22A
Collector-emitter voltage: 900V
Power dissipation: 160W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH