auf Bestellung 3109 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 30.22 EUR |
| 10+ | 28.85 EUR |
| 30+ | 20.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXGT16N170A IXYS
Description: IGBT NPT 1700V 16A TO-268AA, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A, Supplier Device Package: TO-268AA, IGBT Type: NPT, Td (on/off) @ 25°C: 36ns/160ns, Switching Energy: 900µJ (off), Test Condition: 850V, 16A, 10Ohm, 15V, Gate Charge: 65 nC, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 190 W.
Weitere Produktangebote IXGT16N170A nach Preis ab 16.79 EUR bis 30.29 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXGT16N170A | Hersteller : IXYS |
Description: IGBT NPT 1700V 16A TO-268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A Supplier Device Package: TO-268AA IGBT Type: NPT Td (on/off) @ 25°C: 36ns/160ns Switching Energy: 900µJ (off) Test Condition: 850V, 16A, 10Ohm, 15V Gate Charge: 65 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 40 A Power - Max: 190 W |
auf Bestellung 241 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
IXGT16N170A | Hersteller : Littelfuse |
 Trans IGBT Chip N-CH 1700V 16A 190000mW 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
|||||||||
 |
IXGT16N170A | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 11A Pulsed collector current: 40A Turn-on time: 35ns Turn-off time: 298ns Type of transistor: IGBT Power dissipation: 190W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 70nC Technology: NPT Mounting: SMD Case: TO268 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||
|
|
IXGT16N170A | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 11A Pulsed collector current: 40A Turn-on time: 35ns Turn-off time: 298ns Type of transistor: IGBT Power dissipation: 190W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 70nC Technology: NPT Mounting: SMD Case: TO268 |
Produkt ist nicht verfügbar |