Technische Details IXGT16N170AH1 IXYS
Description: IGBT NPT 1700V 16A TO-268AA, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 230 ns, Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A, Supplier Device Package: TO-268AA, IGBT Type: NPT, Td (on/off) @ 25°C: 36ns/160ns, Switching Energy: 900µJ (off), Test Condition: 850V, 16A, 10Ohm, 15V, Gate Charge: 65 nC, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 190 W.
Weitere Produktangebote IXGT16N170AH1
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IXGT16N170AH1 | Hersteller : IXYS |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 11A Pulsed collector current: 40A Turn-on time: 35ns Turn-off time: 298ns Type of transistor: IGBT Power dissipation: 190W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 70nC Technology: NPT Mounting: SMD Case: TO268 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXGT16N170AH1 | Hersteller : IXYS |
Description: IGBT NPT 1700V 16A TO-268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 230 ns Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A Supplier Device Package: TO-268AA IGBT Type: NPT Td (on/off) @ 25°C: 36ns/160ns Switching Energy: 900µJ (off) Test Condition: 850V, 16A, 10Ohm, 15V Gate Charge: 65 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 40 A Power - Max: 190 W |
Produkt ist nicht verfügbar |
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IXGT16N170AH1 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 11A Pulsed collector current: 40A Turn-on time: 35ns Turn-off time: 298ns Type of transistor: IGBT Power dissipation: 190W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 70nC Technology: NPT Mounting: SMD Case: TO268 |
Produkt ist nicht verfügbar |