IXGT16N170AH1 IXYS
Hersteller: IXYS
Description: IGBT NPT 1700V 16A TO-268AA
Power - Max: 190 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 16 A
Gate Charge: 65 nC
Test Condition: 850V, 16A, 10Ohm, 15V
Switching Energy: 900µJ (off)
Td (on/off) @ 25°C: 36ns/160ns
IGBT Type: NPT
Supplier Device Package: TO-268AA
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Reverse Recovery Time (trr): 230 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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Technische Details IXGT16N170AH1 IXYS
Description: IGBT NPT 1700V 16A TO-268AA, Power - Max: 190 W, Current - Collector Pulsed (Icm): 40 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector (Ic) (Max): 16 A, Gate Charge: 65 nC, Test Condition: 850V, 16A, 10Ohm, 15V, Switching Energy: 900µJ (off), Td (on/off) @ 25°C: 36ns/160ns, IGBT Type: NPT, Supplier Device Package: TO-268AA, Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A, Reverse Recovery Time (trr): 230 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
Weitere Produktangebote IXGT16N170AH1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXGT16N170AH1 | IXYS |
 IGBTs 11 Amps 1700V 5 Rds |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXGT16N170AH1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 11A Power dissipation: 190W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 70nC Kind of package: tube Turn-on time: 35ns Turn-off time: 298ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXGT16N170AH1 |
|
Hersteller: IXYS
IGBTs 11 Amps 1700V 5 Rds
IGBTs 11 Amps 1700V 5 Rds
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGT16N170AH1 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH