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IXGT16N170AH1

IXGT16N170AH1 IXYS


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IGBT Transistors 11 Amps 1700V 5 Rds
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Technische Details IXGT16N170AH1 IXYS

Description: IGBT NPT 1700V 16A TO-268AA, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 230 ns, Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A, Supplier Device Package: TO-268AA, IGBT Type: NPT, Td (on/off) @ 25°C: 36ns/160ns, Switching Energy: 900µJ (off), Test Condition: 850V, 16A, 10Ohm, 15V, Gate Charge: 65 nC, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 190 W.

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IXGT16N170AH1 IXGT16N170AH1 Hersteller : IXYS IXGH(t)16N170A_H1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 11A
Pulsed collector current: 40A
Turn-on time: 35ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 70nC
Technology: NPT
Mounting: SMD
Case: TO268
Anzahl je Verpackung: 1 Stücke
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IXGT16N170AH1 IXGT16N170AH1 Hersteller : IXYS Description: IGBT NPT 1700V 16A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 230 ns
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-268AA
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGT16N170AH1 IXGT16N170AH1 Hersteller : IXYS IXGH(t)16N170A_H1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 11A
Pulsed collector current: 40A
Turn-on time: 35ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 70nC
Technology: NPT
Mounting: SMD
Case: TO268
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH