IXGT24N170A IXYS
Hersteller: IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Gate-emitter voltage: ±20V
Collector current: 24A
Power dissipation: 250W
Pulsed collector current: 75A
Collector-emitter voltage: 1.7kV
Technology: NPT
Case: TO268
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Mounting: SMD
Turn-on time: 54ns
Gate charge: 0.14µC
Turn-off time: 456ns
Anzahl je Verpackung: 1 Stücke
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Technische Details IXGT24N170A IXYS
Description: IGBT 1700V 24A 250W TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A, Supplier Device Package: TO-268AA, IGBT Type: NPT, Td (on/off) @ 25°C: 21ns/336ns, Switching Energy: 2.97mJ (on), 790µJ (off), Test Condition: 850V, 24A, 10Ohm, 15V, Gate Charge: 140 nC, Current - Collector (Ic) (Max): 24 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 250 W.
Weitere Produktangebote IXGT24N170A
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXGT24N170A | Hersteller : IXYS |
Description: IGBT 1700V 24A 250W TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A Supplier Device Package: TO-268AA IGBT Type: NPT Td (on/off) @ 25°C: 21ns/336ns Switching Energy: 2.97mJ (on), 790µJ (off) Test Condition: 850V, 24A, 10Ohm, 15V Gate Charge: 140 nC Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 75 A Power - Max: 250 W |
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IXGT24N170A | Hersteller : IXYS |
IGBTs 24 Amps 1200 V 5 V Rds |
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IXGT24N170A | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268 Gate-emitter voltage: ±20V Collector current: 24A Power dissipation: 250W Pulsed collector current: 75A Collector-emitter voltage: 1.7kV Technology: NPT Case: TO268 Features of semiconductor devices: high voltage Type of transistor: IGBT Kind of package: tube Mounting: SMD Turn-on time: 54ns Gate charge: 0.14µC Turn-off time: 456ns |
Produkt ist nicht verfügbar |