IXGT24N170A IXYS
Hersteller: IXYSDescription: IGBT 1700V 24A 250W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
Supplier Device Package: TO-268AA
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/336ns
Switching Energy: 2.97mJ (on), 790µJ (off)
Test Condition: 850V, 24A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
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Technische Details IXGT24N170A IXYS
Description: IGBT 1700V 24A 250W TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A, Supplier Device Package: TO-268AA, IGBT Type: NPT, Td (on/off) @ 25°C: 21ns/336ns, Switching Energy: 2.97mJ (on), 790µJ (off), Test Condition: 850V, 24A, 10Ohm, 15V, Gate Charge: 140 nC, Current - Collector (Ic) (Max): 24 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 250 W.
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IXGT24N170A | Hersteller : IXYS |
IGBTs 24 Amps 1200 V 5 V Rds |
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IXGT24N170A | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268 Features of semiconductor devices: high voltage Type of transistor: IGBT Technology: NPT Mounting: SMD Case: TO268 Turn-on time: 54ns Gate charge: 0.14µC Turn-off time: 456ns Gate-emitter voltage: ±20V Collector current: 24A Pulsed collector current: 75A Power dissipation: 250W Collector-emitter voltage: 1.7kV Kind of package: tube |
Produkt ist nicht verfügbar |