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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 24.32 EUR |
| 10+ | 18.13 EUR |
| 120+ | 17.78 EUR |
| 510+ | 16.51 EUR |
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Technische Details IXGT6N170 IXYS
Description: IGBT NPT 1700V 12A TO-268AA, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A, Supplier Device Package: TO-268AA, IGBT Type: NPT, Td (on/off) @ 25°C: 40ns/250ns, Switching Energy: 1.5mJ (off), Test Condition: 1360V, 6A, 33Ohm, 15V, Gate Charge: 20 nC, Part Status: Active, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 75 W.
Weitere Produktangebote IXGT6N170
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IXGT6N170 | Hersteller : IXYS |
 Description: IGBT NPT 1700V 12A TO-268AAPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A Supplier Device Package: TO-268AA IGBT Type: NPT Td (on/off) @ 25°C: 40ns/250ns Switching Energy: 1.5mJ (off) Test Condition: 1360V, 6A, 33Ohm, 15V Gate Charge: 20 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 24 A Power - Max: 75 W |
Produkt ist nicht verfügbar |
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IXGT6N170 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268; Features: high voltage Case: TO268 Mounting: SMD Kind of package: tube Gate charge: 20nC Turn-on time: 85ns Turn-off time: 0.6µs Power dissipation: 75W Collector current: 3A Pulsed collector current: 24A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.7kV Technology: NPT Features of semiconductor devices: high voltage Type of transistor: IGBT |
Produkt ist nicht verfügbar |