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IXGX120N120B3

IXGX120N120B3 Littelfuse


media.pdf Hersteller: Littelfuse
Trans IGBT Chip N-CH 1200V 200A 830000mW 3-Pin(3+Tab) PLUS 247
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Technische Details IXGX120N120B3 Littelfuse

Description: IGBT PT 1200V 200A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 36ns/275ns, Switching Energy: 5.5mJ (on), 5.8mJ (off), Test Condition: 600V, 100A, 2Ohm, 15V, Gate Charge: 470 nC, Part Status: Active, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 370 A, Power - Max: 830 W.

Weitere Produktangebote IXGX120N120B3

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IXGX120N120B3 IXGX120N120B3 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADE7EA92E47820&compId=IXGK(x)120N120B3.pdf?ci_sign=66d03d7a35e3abfe1e2dfa50266727cc891d888d Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
Anzahl je Verpackung: 1 Stücke
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IXGX120N120B3 IXGX120N120B3 Hersteller : IXYS Description: IGBT PT 1200V 200A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/275ns
Switching Energy: 5.5mJ (on), 5.8mJ (off)
Test Condition: 600V, 100A, 2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 830 W
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IXGX120N120B3 IXGX120N120B3 Hersteller : IXYS media-3320596.pdf IGBTs 15khz-40khz Power Device
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IXGX120N120B3 IXGX120N120B3 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADE7EA92E47820&compId=IXGK(x)120N120B3.pdf?ci_sign=66d03d7a35e3abfe1e2dfa50266727cc891d888d Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH